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PHB6N50E spec.: 500 V, power MOS transistor avalanche energy rated
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PHB6N50E Datasheet i Izvanred
Proizvođač : Philips
Pakiranje : SOT
PIN : 3
Temperature : Min -55 °C | Max 150 °C
Veličina : 84 KB
Application : 500 V, power MOS transistor avalanche energy rated
PHB6N50E Download PDF