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| Dio Br. | Application |
|---|---|
| BS62UV4000PI | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 512K x 8bit |
| BS62UV4000STC | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 512K x 8bit |
| BS616UV4020BC | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable |
| BS62LV1023TI | 70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 128K x 8bit |
| BS62LV1023JC | 70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 128K x 8bit |
| BS616LV2011TI | 70/100ns 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit |
| BS62LV8005EC | 55/70ns 45mA 4.5-5.5V very low power/voltage CMOS SRAM 1M x 8bit |
| BS62LV2001TC-10 | Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
| BS62LV2563PI | 70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 32K x 8bit |
| BS616LV4025DC | 70/55ns 45mA 4.5-5.5V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable |
| BS62LV256PC | 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 32K x 8bit |
| BS616LV8012BC | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 512K x 16bit |
| BS616LV2021DI | 70/100ns 20-40mA 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable |
| BS616LV2011TC | 70/100ns 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit |
| BS616LV4021BI | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable |
| BS616LV4010BC | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit |
| BS62LV4005PC | 55/70ns 45mA 4.5-5.5V low power/voltage CMOS SRAM 512K x 8bit |
| BS62LV1024JI | 70ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 128K x 8bit |
| BS616UV2011TI | 70/100ns 1.8-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit switchable |
| BS62UV1024TC | 150ns 10-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 128K x 8bit |
| BS616LV2015TI | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit |
| BS616LV4015DI | 70/100ns 45mA 4.5-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit |
| BS62LV2001DC-70 | Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns |
| BS62LV2001SC-70 | Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns |
| BS616UV4010DI | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit |
| BS62LV2003TI | 70/100ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 256K x 8bit |
| BS616LV4010BI | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit |
| BS62LV2005SI | 55/70ns 35mA 4.5-5.5V very low power/voltage CMOS SRAM 256K x 8bit |
BSI Profil
BSI, founded in 1996, is a fabless semiconductor manufacturing company and a global supplier of ultra low power SRAM. BSI is headquartered in Taiwan's Silicon Valley, the Science-Based Industrial Park in Hsinchu. BSI provides worldwide ultra low power SRAM solution that covers low density 256K SRAM through 16M SRAM as well as an aggressive roadmap strategy to develop product beyond this. BSI ultra low power SRAM has been used extensively in industry that covers cellular phone, PDA, GPS, handy game, bar code reader, battery-backup electronics, etc. BSI is a major player in the worldwide ultra low power SRAM market.